BF998 datasheet(4/10 Pages) VISHAY

Numer części	BF998

Szczegółowy opis	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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Producent	VISHAY [Vishay Siliconix]

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Document Number 85011

Rev. 1.8, 05-Sep-08

BF998/BF998R/BF998RW

Vishay Semiconductors

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Figure 1. Total Power Dissipation vs. Ambient Temperature

Figure 2. Drain Current vs. Drain Source Voltage

Figure 3. Drain Current vs. Gate 1 Source Voltage

0

50

100

150

200

250

300

020

40

60

80

100 120 140 160

96 12159

Tamb - Ambient Temperature (°C)

0

5

10

15

20

25

30

02

4

6

8

10

VDS - Drain Source Voltage (V)

12812

VG1S =0.6 V

0.4 V

0

- 0.4 V

0.2 V

VG2S =4 V

- 0.2 V

0

4

8

12

16

20

- 0.8

- 0.4

0.0

0.4

0.8

1.2

VG1S - Gate 1 Source Voltage (V)

12816

6 V

5 V

4 V

0

2 V

1 V

3 V

VDS = 8 V

VG2S = - 1 V

Figure 4. Drain Current vs. Gate 2 Source Voltage

Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage

Figure 6. Output Capacitance vs. Drain Source Voltage

0

4

8

12

16

20

- 0.6

- 0.2

0.2

0.6

1.0

1.4

VG2S - Gate 2 Source Voltage (V)

12817

0

2 V

1 V

3 V

VDS = 8 V

5 V

VG1S = - 1 V

4 V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

- 2 - 1.5

- 1

- 0.5

0

0.5

1.0

1.5

VG1S - Gate 1 Source Voltage (V)

12863

VDS = 8V

VG2S =4 V

f=1MHz

0.0

0.5

1.0

1.5

2.0

2.5

3.0

246

8

10

12

VDS - Drain Source Voltage (V)

12864

VG2S = 4 V

f = 1 MHz

Podobny numer części - BF998

Producent	Numer części	Arkusz danych	Szczegółowy opis
NXP Semiconductors	BF998	114Kb / 12P	Silicon N-channel dual-gate MOS-FETs 1996 Aug 01
Vishay Siliconix	BF998	155Kb / 9P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 23-Jun-99
Siemens Semiconductor G...	BF998	180Kb / 8P	Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
Infineon Technologies A...	BF998	249Kb / 6P	Silicon N-Channel MOSFET Tetrode Feb-13-2004
Infineon Technologies A...	BF998	93Kb / 9P	Silicon N_Channel MOSFET Tetrode 2007-04-20

More results

Podobny opis - BF998

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	BF994S	119Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF966SA	161Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.5, 15-Apr-05
	BF995	116Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF961	160Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.5, 25-Nov-04
Vishay Telefunken	BF966	396Kb / 10P	N-Channel Dual Gate MOS-Fieldeffect Tetrode - Depletion Mode
Vishay Siliconix	BF964S	127Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF988	139Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 08-Jul-99
	BF998	155Kb / 9P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 23-Jun-99
	BF966S	127Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF988	157Kb / 9P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.7, 11-Sep-08

More results

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