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SI1025X Arkusz danych(PDF) 4 Page - Vishay Siliconix |
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SI1025X Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 5 page www.vishay.com 4 Document Number: 71433 S-80643-Rev. B, 24-Mar-08 Vishay Siliconix Si1025X TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71433. Threshold Voltage Variance Over Temperature - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ -Junction Temperature (°C) Normalized Thermal Transient Impedance, Junction-to-Ambient 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 500 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
Podobny numer części - SI1025X_08 |
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Podobny opis - SI1025X_08 |
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