Zakładka z wyszukiwarką danych komponentów |
|
SI1070X Arkusz danych(PDF) 4 Page - Vishay Siliconix |
|
SI1070X Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 6 page www.vishay.com 4 Document Number: 73893 S-81528-Rev. C, 30-Jun-08 Vishay Siliconix Si1070X TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 0.6 0.8 1.0 1.2 1.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) 1.5 RDS(on) vs. VGS vs. Temperature Single Pulse Power 0.00 0.06 0.12 0.18 0.24 01 2 3 45 TA = 25 °C GS - Gate-to-Source Voltage (V) ID = 1.2 A TA = 125 °C V Time (s) 0.0 1.0 2.0 3.0 4.0 5.0 0.01 0.1 1 10 100 1000 Safe Operating Area, Junction-to-Ambient 0.001 10 1 0.1 1 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) 10 TA = 25 ° C Single Pulse Limited by RDS(on)* BVDSS Limited 100 ms DC 1 s 10 s 10 ms 1 ms 100 µs * VGS > minimum VGS at which RDS(on) is specified |
Podobny numer części - SI1070X |
|
Podobny opis - SI1070X |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |