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SI1450DH Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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SI1450DH Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si1450DH New Product Document Number: 74275 S-62079-Rev. A, 23-Oct-06 www.vishay.com 1 N-Channel 8-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET: 1.5 V Rated • 100 % Rg Tested APPLICATIONS • Load Switch for Portable Applications - Guaranteed Operation at VGS = 1.5 V Critical for Optimized Design and Space Savings PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) a Qg (Typ) 8 0.047 at VGS = 4.5 V 4.0a 4.24 nC 0.051 at VGS = 2.5 V 4.0a 0.058 at VGS = 1.8 V 4.0a 0.069 at VGS = 1.5 V 4.0a Ordering Information: Si1450DH-T1-E3 (Lead (Pb)-free) Marking Code AH XX Lot Traceability and Date Code Part # Code SOT-363 SC-70 (6-LEADS) 6 4 1 2 3 5 Top View D D G D D S N-Channel MOSFET G D S Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. Maximum under Steady State conditions is 125 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 8 V Gate-Source Voltage VGS ± 5 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 6.04a A TC = 70 °C 4.8a TA = 25 °C 4.53a TA = 70 °C 3.62a Pulsed Drain Current IDM 15 Continuous Source-Drain Diode Current TC = 25 °C IS 2.3 TA = 25 °C 1.3c Maximum Power Dissipation TC = 25 °C PD 2.78 W TC = 70 °C 1.78 TA = 25 °C 1.56b, c TA = 70 °C 1.0b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 5 sec RthJA 60 80 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 34 45 RoHS COMPLIANT |
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