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SI1988DH Arkusz danych(PDF) 4 Page - Vishay Siliconix |
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SI1988DH Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 74296 S-62109-Rev. A, 23-Oct-06 Vishay Siliconix Si1988DH TYPICAL CHARACTERISTICS 25 °C, unless noted Forward Diode Voltage Threshold Voltage 10 0.100 VSD − Source-to-Drain Voltage (V) 1 0 0.2 0.4 0.6 0.8 1.2 1 TJ = - 150 °C TJ = - 25 °C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ – Temperature (°C) On-Resistance vs. Gate-Source Voltage Single Pulse Power 0.100 0.150 0.200 0.250 0.300 0.350 0.400 012 3 45 VGS – Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 1.4 A 0 1 5 Time (sec) 3 4 1600 10 0.1 0.01 2 100 Safe Operating Area, Junction-to-Case 0.01 0.1 1 10 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified *Limited by r DS(on) 100 µs 1 s 10 ms 100 ms 1 ms 10 s DC TA = 25 °C Single Pulsed BVDSS Limited |
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