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SI2307CDS-T1-GE3 Arkusz danych(PDF) 4 Page - Vishay Siliconix |
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SI2307CDS-T1-GE3 Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 6 page www.vishay.com 4 Document Number: 68768 S-81580-Rev. A, 07-Jul-08 Vishay Siliconix Si2307CDS New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.3 0.6 0.9 1.2 1.5 10 VSD -Source-to-Drain Voltage (V) 0.1 1 0.01 TJ = 150 °C 0.001 TJ = - 50 °C TJ = 25 °C -0.4 -0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID =1mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.0 0.1 0.2 0.3 0.4 02 4 6 8 10 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 3.5 A 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 Time (s) TA = 25 °C Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 1s,10s 100 s, DC Limited byRDS(on)* BVDSS Limited 10 ms 1ms 100 µs 100 ms |
Podobny numer części - SI2307CDS-T1-GE3 |
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Podobny opis - SI2307CDS-T1-GE3 |
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