Vishay Siliconix

Si2308BDS

www.vishay.com

2

Document Number: 69958

S-80429-Rev. A, 03-Mar-08

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

60

V

ΔV

55

mV/°C

ΔV

- 5

Gate-Source Threshold Voltage

13

V

Gate-Source Leakage

± 100

nA

Zero Gate Voltage Drain Current

1

µA

10

8A

0.130

0.156

Ω

0.160

0.192

5S

Input Capacitance

190

pF

Output Capacitance

26

Reverse Transfer Capacitance

15

Total Gate Charge

4.5

6.8

nC

2.3

3.5

Gate-Source Charge

0.8

Gate-Drain Charge

1

Gate Resistance

f = 1 MHz

0.6

2.8

5.6

Ω

Turn-On Delay Time

46

ns

Rise Time

10

15

Turn-Off Delay Time

10

15

Fall Time

710.5

Turn-On Delay Time

15

23

ns

Rise Time

16

24

Turn-Off Delay Time

11

17

Fall Time

11

17

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

1.39

A

8

Body Diode Voltage

0.8

1.2

V

Body Diode Reverse Recovery Time

15

23

ns

Body Diode Reverse Recovery Charge

10

15

nC

Reverse Recovery Fall Time

12

ns

Reverse Recovery Rise Time

3