Zakładka z wyszukiwarką danych komponentów |
|
SI3407DV Arkusz danych(PDF) 2 Page - Vishay Siliconix |
|
SI3407DV Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 69987 S-80673-Rev. A, 31-Mar-08 Vishay Siliconix Si3407DV New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA -18.7 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 3.7 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 0.65 - 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 4.5 V - 25 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 7.5 A 0.0200 0.0240 Ω VGS = - 2.5 V, ID = - 6.4 A 0.0310 0.0327 Forward Transconductancea gfs VDS = - 10 V, ID = - 7.5 A 25 S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 1670 pF Output Capacitance Coss 335 Reverse Transfer Capacitance Crss 284 Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 7.5 A 42 63 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 7.5 A 21 32 Gate-Source Charge Qgs 6 Gate-Drain Charge Qgd 5 Gate Resistance Rg f = 1 MHz 1.3 6.5 13 Ω Turn-on Delay Time td(on) VDD = - 10 V, RL = 1.7 Ω ID ≅ - 6.0 A, VGEN = - 10 V, Rg = 1 Ω 816 ns Rise Time tr 11 17 Turn-Off Delay Time td(off) 65 98 Fall Time tf 39 59 Turn-on Delay Time td(on) VDD = - 10 V, RL = 1.7 Ω ID ≅ - 6.0 A, VGEN = - 4.5 V, Rg = 1 Ω 32 48 Rise Time tr 62 93 Turn-Off Delay Time td(off) 53 80 Fall Time tf 38 57 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 3.5 A Pulse Diode Forward Currenta ISM - 25 Body Diode Voltage VSD IS = - 6.0 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = 6.0 A, di/dt = 100 A/µs, TJ = 25 °C 37 56 ns Body Diode Reverse Recovery Charge Qrr 22 33 nC Reverse Recovery Fall Time ta 12 ns Reverse Recovery Rise Time tb 25 |
Podobny numer części - SI3407DV |
|
Podobny opis - SI3407DV |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |