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SI3460BDV-T1-E3 Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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SI3460BDV-T1-E3 Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 74412 S-70187-Rev. A, 29-Jan-07 www.vishay.com 3 Vishay Siliconix Si3460BDV TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 5 10 15 20 0.0 0.4 0.8 1.2 1.6 2.0 VGS = 5 thru 2 V 1 V VDS - Drain-to-Source Voltage (V) 1.5 V 0.020 0.030 0.040 0.050 0.060 0 5 10 15 20 ID - Drain Current (A) VGS = 4.5 V VGS = 1.8 V VGS = 2.5 V 0 1 2 3 4 5 6 7 8 0 369 12 15 18 Qg - Total Gate Charge (nC) VDS = 16 V ID = 8 A VDS = 10 V ID = 8 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0.0 0.3 0.6 0.9 1.2 1.5 1.8 25 °C TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) 0 300 600 900 1200 04 8 12 16 20 Coss Ciss VDS - Drain-to-Source Voltage (V) Crss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 ID = 5.1 A TJ - Junction Temperature (°C) |
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