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SI3586DV Arkusz danych(PDF) 4 Page - Vishay Siliconix |
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SI3586DV Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 72310 S-60422-Rev. C, 20-Mar-06 Vishay Siliconix Si3586DV New Product N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.2 0.1 1 10 0.00 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - 0.4 - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.00 0.05 0.10 0.15 0.20 0.25 0 1234 5 ID = 3.4 A VGS - Gate-to-Source Voltage (V) 0.01 0 1 6 8 2 4 10 30 0.1 Time (sec) Safe Operating Area, Junction-to-Case VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified 10 0.1 0.1 1 10 100 0.01 1 ms 1 r Limited by DS(on) TC = 25 °C Single Pulse 10 ms 100 ms dc 1 s 10 s |
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