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SI3879DV-T1-E3 Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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SI3879DV-T1-E3 Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 74958 S-71290–Rev. A, 02-Jul-07 www.vishay.com 3 Vishay Siliconix Si3879DV New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 2.7 A Pulse Diode Forward Current ISM - 20 Body Diode Voltage VSD IS = - 1.0 A, VGS = 0 V - 0.75 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 3.5 A, di/dt = 100 A/µs, TJ = 25 °C 25 40 ns Body Diode Reverse Recovery Charge Qrr 12 20 nC Reverse Recovery Fall Time ta 9 ns Reverse Recovery Rise Time tb 16 SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Forward Voltage Drop VF IF = 1 A 0.41 0.45 V IF = 1 A, TJ = 125 °C 0.36 0.41 Maximum Reverse Leakage Current Irm Vr = 5 V 0.015 0.08 mA Vr = 5 V, TJ = 85 °C 0.50 5.00 Vr = 20 V 0.02 0.10 Vr = 20 V, TJ = 85 °C 0.7 7.00 Vr = 20 V, TJ = 125 °C 550 Junction Capacitance CT Vr = 10 V 60 pF |
Podobny numer części - SI3879DV-T1-E3 |
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Podobny opis - SI3879DV-T1-E3 |
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