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SI3981DV Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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SI3981DV Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Si3981DV Vishay Siliconix New Product www.vishay.com 2 Document Number: 72502 S-40575—Rev. C, 29-Mar-04 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA −0.40 −1.1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V −1 mA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V, TJ = 85_C −10 mA On-State Drain Currenta ID(on) VDS = −5 V, VGS = −4.5 V −5 A VGS = −4.5 V, ID = −1.9 A 0.146 0.185 Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −1.6 A 0.210 0.260 W DS(on) VGS = −1.8 V, ID = −0.7 A 0.306 0.385 Forward Transconductancea gfs VDS = −5 V, ID = −1.9 A 4 S Diode Forward Voltagea VSD IS = −1.0 A, VGS = 0 V −0.84 −1.1 V Dynamicb Total Gate Charge Qg 3.2 5 Gate-Source Charge Qgs VDS = −10 V, VGS = −4.5 V, ID = −1.9 A 0.42 nC Gate-Drain Charge Qgd 0.84 Gate Resistance Rg f = 1 MHz 6 W Turn-On Delay Time td(on) 30 45 Rise Time tr VDD = −10 V, RL = 10 W 50 85 Turn-Off Delay Time td(off) VDD = 10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W 45 85 ns Fall Time tf 21 50 Source-Drain Reverse Recovery Time trr IF = −1.00 A, di/dt = 100 A/ms 20 40 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 1 2 3 4 5 6 7 8 012345 0 1 2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) VGS = 5 thru 3 V 2 V TC = −55_C 125_C 1.5 V 25_C 2.5 V |
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