SI5515CDC datasheet(4/12 Pages) VISHAY

Numer części	SI5515CDC

Szczegółowy opis	N- and P-Channel 20-V (D-S) MOSFET

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Document Number: 68747

S-81545-Rev. A, 07-Jul-08

Vishay Siliconix

Si5515CDC

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

4

8

12

16

20

0

1234

5

VDS - Drain-to-Source Voltage (V)

VGS =5thru 2 V

VGS =1.5 V

VGS =1 V

0.000

0.015

0.030

0.045

0.060

0.075

04

8

12

16

20

ID - Drain Current (A)

VGS =1.8V

VGS =2.5 V

VGS =4.5 V

0

1

2

3

4

5

024

6

8

Qg - Total Gate Charge (nC)

ID =6A

VDS =10 V

VDS =16 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

0.0

0.3

0.6

0.9

1.2

1.5

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

Crss

0

200

400

600

800

1000

04

8

12

16

20

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.6

0.9

1.2

1.5

1.8

- 50

- 25

0

25

50

75

100

125

150

TJ -Junction Temperature (°C)

VGS =4.5 V,ID =6A

VGS =2.5 V,ID =5.6 A

Podobny numer części - SI5515CDC

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