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SI5515CDC-T1-E3 Arkusz danych(PDF) 9 Page - Vishay Siliconix |
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SI5515CDC-T1-E3 Arkusz danych(HTML) 9 Page - Vishay Siliconix |
9 / 12 page Document Number: 68747 S-81545-Rev. A, 07-Jul-08 www.vishay.com 9 Vishay Siliconix Si5515CDC P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.1 0.30.5 0.70.9 1.11.3 TJ = 150 °C VSD -Source-to-Drain Voltage (V) TJ = 25 °C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.03 0.06 0.09 0.12 0.15 0.18 024 6 8 VGS - Gate-to-Source Voltage (V) TJ =25 °C TJ = 125 °C ID = - 3.1 A 0 10 20 30 40 Time (s) 1 10-1 10-4 10-3 10-2 1000 100 10 Safe Operating Area, Junction-to-Case TA = 25 °C Single Pulse 100 ms 1s,10s DC Limited byRDS(on)* BVDSS Limited 10 ms 1ms 100 µs VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 |
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