SI5517DU datasheet(2/12 Pages) VISHAY

Numer części	SI5517DU

Szczegółowy opis	N- and P-Channel 20-V (D-S) MOSFET

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Producent	VISHAY [Vishay Siliconix]

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Document Number: 73529

S-81449-Rev. B, 23-Jun-08

Vishay Siliconix

Si5517DU

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 1 mA

N-Ch

20

V

VGS = 0 V, ID = - 1 mA

P-Ch

- 20

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

N-Ch

17

mV/°C

ID = - 250 µA

P-Ch

- 20

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

ID = 250 µA

N-Ch

- 2.6

ID = - 250 µA

P-Ch

2.4

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

0.4

1

V

VDS = VGS, ID = - 250 µA

P-Ch

- 0.4

- 1

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

N-Ch

100

nA

P-Ch

- 100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

N-Ch

1

µA

VDS = - 20 V, VGS = 0 V

P-Ch

- 1

VDS = 20 V, VGS = 0 V, TJ = 55 °C

N-Ch

10

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

P-Ch

- 10

On-State Drain Currentb

ID(on)

VDS ≤ 5 V, VGS = 4.5 V

N-Ch

20

A

VDS ≤ - 5 V, VGS = - 4.5 V

P-Ch

- 15

Drain-Source On-State Resistanceb

RDS(on)

VGS = 4.5 V, ID = 4.4 A

N-Ch

0.032

0.039

Ω

VGS = - 4.5 V, ID = - 3.3 A

P-Ch

0.060

0.072

VGS = 2.5 V, ID = 4.1 A

N-Ch

0.037

0.045

VGS = - 2.5 V, ID = - 2.8 A

P-Ch

0.083

0.100

VGS = 1.8 V, ID = 1.8 A

N-Ch

0.0455

0.055

VGS = - 1.8 V, ID = - 0.76 A

P-Ch

0.108

0.131

Forward Transconductanceb

gfs

VDS = 10 V, ID = 4.4 A

N-Ch

22

S

VDS = - 10 V, ID = - 3.3 A

P-Ch

9

Dynamica

Input Capacitance

Ciss

N-Channel

VDS = 10 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = - 10 V, VGS = 0 V, f = 1 MHz

N-Ch

520

pF

P-Ch

455

Output Capacitance

Coss

N-Ch

100

P-Ch

105

Reverse Transfer Capacitance

Crss

N-Ch

60

P-Ch

65

Total Gate Charge

Qg

VDS = 10 V, VGS = 8 V, ID = 4.4 A

N-Ch

10.5

16

nC

VDS = - 10 V, VGS = - 8 V, ID = - 4.6 A

P-Ch

9.1

14

N-Channel

VDS = 10 V, VGS = 4.5 V, ID = 4.4 A

P-Channel

VDS = - 10 V, VGS = - 4.5 V, ID = - 1.8 A

N-Ch

6

9

P-Ch

5.5

8.5

Gate-Source Charge

Qgs

N-Ch

0.91

P-Ch

0.75

Gate-Drain Charge

Qgd

N-Ch

0.7

P-Ch

1.5

Gate Resistance

Rg

f = 1 MHz

N-Ch

1.9

Ω

P-Ch

8

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