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SI5858DU Arkusz danych(PDF) 9 Page - Vishay Siliconix |
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SI5858DU Arkusz danych(HTML) 9 Page - Vishay Siliconix |
9 / 10 page Document Number: 73460 S-81449-Rev. B, 23-Jun-08 www.vishay.com 9 Vishay Siliconix Si5858DU SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73460. Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 1000 10-1 10-4 100 0.02 0.2 0.1 0.05 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1 0.1 0.01 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 93 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 110 10-1 10-4 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) |
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