FEATURES

D TrenchFETr Power MOSFET

D 2.5-V Rated

D Lead (Pb)-Free Version is RoHS

Compliant

Available

Si5904DC

Vishay Siliconix

Document Number: 71065

S-50695—Rev. C, 18-Apr-05

www.vishay.com

1

Dual N-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY

20

"4.2

20

"3.1

1206-8 ChipFE

Tt

1

Bottom View

Marking Code

CB XX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si5904DC-T1

Si5904DC-T1—E3 (Lead (Pb)-Free)

N-Channel MOSFET

N-Channel MOSFET

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

"12

V

"4.2

"3.1

"3.0

"2.2

A

Pulsed Drain Current

"10

A

1.8

0.9

2.1

1.1

W

1.1

0.6

W

Operating Junction and Storage Temperature Range

−55 to 150

_C

260

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t v 5 sec

R

50

60

Steady State

90

110

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

30

40

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation

process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-

nection.

c.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.