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TSDF1205R Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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TSDF1205R Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number 85065 Rev. 1.7, 08-Sep-08 TSDF1205 / 1205R / 1205W / 1205RW Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Maximum Thermal Resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Collector-base voltage VCBO 9V Collector-emitter voltage VCEO 4V Emitter-base voltage VEBO 2V Collector current IC 12 mA Total power dissipation Tamb ≤ 132 °C Ptot 40 mW Junction temperature Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Parameter Test condition Symbol Value Unit Junction to ambient air 1) RthJA 450 K/W Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter cut-off current VCE = 12 V, VBE = 0 ICES 100 µA Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 2µA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 4V Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA VCEsat 0.1 0.5 V DC forward current transfer ratio VCE = 2 V, IC = 2 mA hFE 50 120 250 |
Podobny numer części - TSDF1205R |
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Podobny opis - TSDF1205R |
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