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TSHA6500 Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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TSHA6500 Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Document Number: 81022 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.7, 05-Sep-08 167 TSHA6500, TSHA6501, TSHA6502, TSHA6503 Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs Vishay Semiconductors Note Tamb = 25 °C, unless otherwise specified Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature Note Tamb = 25 °C, unless otherwise specified Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT 0 20 40 60 80 100 120 140 160 180 200 010 20 30 40 50 60 70 80 90 100 21142 T amb - Ambient Temperature (°C) R thJA = 230 K/W 0 20 40 60 80 100 120 0 10 203040 506070 80 90 100 T amb - Ambient Temperature (°C) 21143 R thJA = 230 K/W BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA, tp = 20 ms VF 1.5 1.8 V Temperature coefficient of VF IF = 100 mA TKVF - 1.6 mV/K Reverse current VR = 5 V IR 100 µA Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj 20 pF Temperature coefficient of φ e IF = 20 mA TK φ e - 0.7 %/K Angle of half intensity ϕ ± 24 deg Peak wavelength IF = 100 mA λ p 875 nm Spectral bandwidth IF = 100 mA Δλ 80 nm Temperature coefficient of λ p IF = 100 mA TK λ p 0.2 nm/K Rise time IF = 100 mA tr 600 ns IF = 1.5 A tr 300 ns Fall time IF = 100 mA tf 600 ns IF = 1.5 A tf 300 ns Virtual source diameter d 2.2 mm |
Podobny numer części - TSHA6500 |
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Podobny opis - TSHA6500 |
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