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SB320S Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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SB320S Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 4 page New Product SB320S thru SB360S Vishay General Semiconductor Document Number: 88819 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Figure 3. Typical Instantaneous Forward Characteristics Figure 4. Typical Reverse Characteristics 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 SB320S - SB340S SB350S & SB360S T J = 125 °C T J = 25 °C Pulse Width = 300 µs 1 % Duty Cycle Instantaneous Forward Voltage (V) 0 20 40 60 80 100 0.001 0.01 0.1 1 10 SB320S - SB340S SB350S & SB360S T J = 125 °C T J = 25 °C T J = 75 °C Percent of Rated Peak Reverse Voltage (%) Figure 5. Typical Junction Capacitance Figure 6. Typical Transient Thermal Impedance 100 1000 0.1 10 1 10 100 SB320S - SB340S SB350S & SB360S T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p Reverse Voltage (V) 0.1 1 10 1 10 100 100 0 t - Pulse Duration (s) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 1.0 (25.4) MIN. |
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