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LS103B-GS18 Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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LS103B-GS18 Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number 85631 Rev. 1.3, 17-Mar-06 LS103A / 103B / 103C Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Junction to ambient air l = 4 mm, TL = constant RthJA 250 K/W Junction temperature Tj 125 °C Storage temperature range Tstg - 65 to + 150 °C Parameter Test condition Part Symbol Min Typ. Max Unit Reverse Breakdown Voltage IR = 10 µA LS103A V(BR)R 40 V LS103B V(BR)R 30 V LS103C V(BR)R 20 V Leakage current VR = 30 V LS103A IR 5µA VR = 20 V LS103B IR 5µA VR = 10 V LS103C IR 5µA Forward voltage drop IF = 20 mA VF 370 mV IF = 200 mA VF 600 mV Diode capacitance VR = 0 V, f = 1 MHz CD 50 pF Reverse recovery time IF = IR = 50 to 200 mA, recover to 0.1 IR trr 10 ns Figure 1. Forward Current vs. Forward Voltage 0 100 200 300 400 500 600 700 800 900 1000 V F - Forward Voltage (mV) 16765 1000 100 10 1 0.1 0.01 0.001 Figure 2. Forward Current vs. Forward Voltage 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 V F - Forward Voltage (V) 16766 |
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