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3N80-TA3-T Arkusz danych(PDF) 3 Page - Unisonic Technologies |
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3N80-TA3-T Arkusz danych(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 3N80 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-283.a ELECTRICAL CHARACTERISTICS(Cont.) SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage(Note 1) VSD ISD=2.5A ,VGS=0V 1.6 V Source-Drain Current ISD 2.5 A Source-Drain Current (Pulsed) ISDM 10 A Reverse Recovery Current IRRM 8.4 A Body Diode Reverse Recovery Time tRR 384 ns Body Diode Reverse Recovery Charge QRR ISD=2.5A, di/dt=100A/μs, VDD=50V, TJ=25°C 1600 nC Note: 1.Pulse width=300μs, Duty cycle≦1.5% Note: 2.COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS increases from 0to 80% VDSS. |
Podobny numer części - 3N80-TA3-T |
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Podobny opis - 3N80-TA3-T |
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