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TA33-5M2F25RD0016 Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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TA33-5M2F25RD0016 Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 3 page Dual Value Chip Resistors, Center Tap TA 33 Vishay Sfernice www.vishay.com For technical questions, contact: sfer@vishay.com Document Number: 60066 42 Revision: 06-Oct-08 These tantalum chips combine excellent stability 0.07 % (2000 h, rated power at + 70 °C) with great power handling capacity. Two bonding pads per termination allow greater flexibility in hybrid layout design. FEATURES • Center tap feature • Resistor material: self-passivating Tantalum Nitride • Silicon substrate for good power dissipation • Low cost • Wirebondable TYPICAL PERFORMANCE SCHEMATIC * Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902 Actual Size ABS TRACKING TCR 100 ppm/°C 5 ppm/°C ABS RATIO TOL. 0.5 % 0.5 % RT = R1 + R2 with R1 = R2 Standard R 1 R 2 R T STANDARD ELECTRICAL SPECIFICATIONS TEST SPECIFICATIONS CONDITIONS MATERIAL TANTALUM NITRIDE Resistance range 50 Ω to 1 MΩ for RT = R1 + R2 TCR: Tracking ± 5 ppm/°C - 55 °C to + 155 °C Absolute ± 100 ppm/°C (± 50 ppm/°C on request) - 55 °C to + 155 °C Ohmic value Ratio 1/1 standard (unequal values: please consult) Tolerance: Absolute ± 0.5 %, ± 1 %, ± 2 % Matching ± 0.5 % standard Power dissipation 250 mW at + 25 °C, 125 mW at + 70 °C, 50 mW at + 125 °C Stability ± 0.07 % typical, ± 0.1 maximum 2000 h at + 70 °C under Pn Working voltage 50 VDC on RT Operating temperature range - 55 °C to + 155 °C Storage temperature range - 55 °C to + 155 °C Noise < - 35 dB typical MIL-STD-202 Method 308 Thermal EMF 0.01 µV/°C Shelf life stability 100 ppm 1 year at + 25 °C |
Podobny numer części - TA33-5M2F25RD0016 |
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Podobny opis - TA33-5M2F25RD0016 |
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