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TIP32A Arkusz danych(PDF) 2 Page - STMicroelectronics |
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TIP32A Arkusz danych(HTML) 2 Page - STMicroelectronics |
2 / 5 page THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 3.12 62. 5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ICEO Collector Cut-of f Current (IB =0) for T IP31A/ 32A VCE =30 V for T IP31C/ 32B/32C VCE =60 V 0. 3 0. 3 mA mA ICES Collector Cut-of f Current (VBE =0) for T IP31A/ 32A VCE =60 V for T IP/ 32B VCE =80 V for T IP31C/ 32C VCE =100 V 0. 2 0. 2 0. 2 mA mA mA IEBO Emitter Cut-of f Current (IC =0) VEB =5 V 1 mA VCEO(s us) ∗ Collector-Emitter Sustaining Volt age (IB =0) IC =30 mA for TIP31A/32A for TIP32B for TIP31C/32C 60 80 100 V V V VCE(sat) ∗ Collector-Emitter Sat uration Voltage IC =3 A IB =375 mA 1. 2 V VBE(on) ∗ Base-Emitter Voltage IC =3 A VCE =4 V 1. 8 V hFE ∗ DC Current G ain IC =1 A VCE =4 V IC =3 A VCE =4 V 25 10 50 hfe Small Signall Current Gain IC =0.5 A VCE =10 V f = 1 KHz IC =0.5 A VCE =10 V f = 1 MHz 20 3 ∗ Pulsed : pulse duration = 300 µs, duty cycle ≤ 2% For PNP types voltage and current values are negative. Safe Operating Area Derating Curves TIP31A/TIP31C/TIP32A/TIP32B/TIP32C 2/5 |
Podobny numer części - TIP32A |
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Podobny opis - TIP32A |
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