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TIP34C Arkusz danych(PDF) 2 Page - STMicroelectronics |
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TIP34C Arkusz danych(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.56 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = 140 V 400 µA ICEO Collector Cut-off Current (IB = 0) VCE = 60 V 0.7 mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 1 mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 30 mA 100 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 3 A IB = 0.3 A IC = 10 A IB = 2.5 A 1 4 V V VBE(on) ∗ Base-Emitter Voltage IC = 3 A VCE = 4 V IC = 10 A VCE = 4 V 1.6 3 V V hFE ∗ DC Current Gain IC = 1 A VCE = 4 V IC = 3 A VCE = 4 V 40 20 100 hfe Small Signal Current Gain IC = 0.5 A VCE = 10 V f = 1 KHz 20 fT Transition frequency IC = 0.5 A VCE = 10 V f = 1 MHz 3 MHz ton ts tf RESISTIVE LOAD Turn-on Time Storage Time Fall Time VCC = 30V IC = 6 A VBB = - 6 V IB1 = - IB2 = 0.6 A tp = 20 µs 0.6 0.4 1 µs µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % TIP33C / TIP34C 2/4 |
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