IRF830FP datasheet(2/4 Pages) SUNTAC

Numer części	IRF830FP

Szczegółowy opis	POWER MOSFET

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IRF830

POWER MOSFET

P

Page 2

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25

.

CIRF830

Characteristic

Symbol

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

(VGS = 0 V, ID = 250

A)

V(BR)DSS

500

V

Drain-Source Leakage Current

(VDS = 500V, VGS = 0 V)

IDSS

25

A

Gate-Source Leakage Current-Forward

(Vgsf = 20 V, VDS = 0 V)

IGSSF

100

nA

Gate-Source Leakage Current-Reverse

(Vgsr = -20 V, VDS = 0 V)

IGSSR

-100

nA

Gate Threshold Voltage

(VDS = VGS, ID = 250

A)

VGS(th)

2.0

4.0

V

Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.7A) (Note 3)

RDS(on)

1.5

Forward Transconductance (VDS = 15V, ID = 2.5 A) (Note 3)

gFS

2.8

mhos

Input Capacitance

Ciss

520

730

pF

Output Capacitance

Coss

170

240

pF

Reverse Transfer Capacitance

(VDS = 25 V, VGS = 0 V,

f = 1.0 MHz)

Crss

11

20

pF

Turn-On Delay Time

td(on)

7.0

10

ns

Rise Time

tr

9.0

20

ns

Turn-Off Delay Time

td(off)

20

40

ns

Fall Time

(VDD = 250 V, ID = 5 A,

RG = 9.1 , VGS = 10 V) (Note 3)

tf

10

20

ns

Total Gate Charge

Qg

10

nC

Gate-Source Charge

Qgs

2

nC

Gate-Drain Charge

(VDS = 400V, ID = 5A

VGS = 10 V) (Note 3)

Qgd

3

nC

Internal Drain Inductance

(Measured from the drain lead 0.25” from package to center of die)

LD

4.5

nH

Internal Drain Inductance

(Measured from the source lead 0.25” from package to source bond pad)

LS

7.5

nH

SOURCE-DRAIN DIODE CHARACTERISTICS

Reverse Recovery Charge

Qrr

1.8

µC

Forward Turn-On Time

ton

**

Reverse Recovery Time

IF = 5A, di/dt = 100A/µs , TJ = 25

trr

415

ns

Diode Forward Voltage

IS = 5A, VGS = 0 V

VSD

1.5

V

Note

(1)

Repetitive rating; pulse width limited by max. junction temperature

(2)

VDD = 100V, VGS = 10V, L=10mH, IAS = 5A, RG = 25

(3)

Pulse.Test:.Duty Cycle

2% , Pulse.Width

300µs

** Negligible, Dominated by circuit inductance

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