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TC4428 Arkusz danych(PDF) 3 Page - TelCom Semiconductor, Inc |
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TC4428 Arkusz danych(HTML) 3 Page - TelCom Semiconductor, Inc |
3 / 6 page 4-247 TELCOM SEMICONDUCTOR, INC. 7 6 5 4 3 1 2 8 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 ELECTRICAL CHARACTERISTICS (CONT.): Specifications measured over operating temperature range with 4.5V ≤ V DD ≤ 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Input VIH Logic 1 High Input Voltage 2.4 — — V VIL Logic 0 Low Input Voltage — — 0.8 V IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA Output VOH High Output Voltage VDD – 0.025 — — V VOL Low Output Voltage — — 0.025 V RO Output Resistance VDD = 18V, IO = 10 mA — 9 12 Ω IPK Peak Output Current Duty Cycle ≤ 2%, t ≤ 300µsec — 1.5 — A IREV Latch-Up Protection Duty Cycle ≤ 2% > 0.5 — — A Withstand Reverse Current t ≤ 300µsec Switching Time (Note 1) tR Rise Time Figure 1 — — 40 nsec tF Fall Time Figure 1 — — 40 nsec tD1 Delay Time Figure 1 — — 40 nsec tD2 Delay Time Figure 1 — — 60 nsec Power Supply IS Power Supply Current VIN = 3V (Both Inputs) — — 8 mA VIN = 0V (Both Inputs) — — 0.6 NOTE: 1. Switching times are guaranteed by design. +5V INPUT 10% 90% 10% 90% 10% 90% VDD OUTPUT tD1 0V 90% 10% 10% 10% tF 90% +5V INPUT VDD OUTPUT 0V 0V 0V 90% OUTPUT INPUT 0.1 µF CL = 1000 pF 4.7 µF VDD= 18V Inverting Driver 3 2,4 5,7 6 Noninverting Driver tF tD2 tR tR tD1 tD2 INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10ns Figure 1. Switching Time Test Circuit NOTE: The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4. 200 0 400 600 800 1000 1200 1400 1600 0 10 20 30 40 50 60 70 80 90 100 110 120 AMBIENT TEMPERATURE ( °C) 8 Pin DIP Thermal Derating Curves 8 Pin CerDIP 8 Pin SOIC Crossover Energy Loss 4 18 6 8 10 12 14 16 8 7 6 5 4 3 2 10 –9 10 –8 9 VDD |
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