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2SC2618 Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Numer części 2SC2618
Szczegółowy opis  Silicon NPN Epitaxial
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Producent  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Strona internetowa  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC2618 Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC2618 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
Silicon NPN Epitaxial
2SC2618
Features
Low frequency amplifier.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
35
V
Emitter-base voltage
VEBO
4V
Collector current
IC
500
mA
Collector dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE =0
35
V
Collector-emitter breakdown voltage
V(BR)CEO IC =1mA , RBE =
35
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC =0
4
V
Collector cutoff current
ICBO
VCB = 20V, IC =0
0.5
ìA
hFE1VCE =3V , IC = 10mA
100
320
hFE2VCE =3V , IC = 500mA
10
Collector-emitter saturation voltage
VCE(sat) IC = 150mA , IB = 15mA
0.2
0.6
V
Base-emitter voltage
VBE
VCE =3V , IC = 10mA
0.64
V
DC current gain
hFE Classification
Marking
RC
RD
hFE
100
200
160
320


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