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2SC2618 Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC2618 Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type IC www.kexin.com.cn 1 SMD Type Transistors 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 Silicon NPN Epitaxial 2SC2618 Features Low frequency amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 35 V Emitter-base voltage VEBO 4V Collector current IC 500 mA Collector dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55to+150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE =0 35 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA , RBE = 35 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC =0 4 V Collector cutoff current ICBO VCB = 20V, IC =0 0.5 ìA hFE1VCE =3V , IC = 10mA 100 320 hFE2VCE =3V , IC = 500mA 10 Collector-emitter saturation voltage VCE(sat) IC = 150mA , IB = 15mA 0.2 0.6 V Base-emitter voltage VBE VCE =3V , IC = 10mA 0.64 V DC current gain hFE Classification Marking RC RD hFE 100 200 160 320 |
Podobny numer części - 2SC2618 |
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Podobny opis - 2SC2618 |
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