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TC682COA Arkusz danych(PDF) 2 Page - TelCom Semiconductor, Inc |
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TC682COA Arkusz danych(HTML) 2 Page - TelCom Semiconductor, Inc |
2 / 6 page 4-22 TELCOM SEMICONDUCTOR, INC. ABSOLUTE MAXIMUM RATINGS* VIN .......................................................................... +5.8V VIN dV/dT ............................................................. 1V/µsec VOUT ......................................................................– 11.6V VOUT Short-Circuit Duration ............................ Continuous Power Dissipation (TA ≤ 70°C) Plastic DIP ........................................................... 730mW SOIC ...............................................................470mW Storage Temperature Range ................ – 65 °C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300 °C PIN DESCRIPTION Pin No. 8-Pin DIP/SOIC Symbol Description 1C1 – Input. Capacitor C1 negative terminal. 2C2 + Input. Capacitor C2 positive terminal. 3C2 – Input. Capacitor C2 negative terminal 4VOUT Output. Negative output voltage (– 2VIN) 5 GND Input. Device ground. 6VIN Input. Power supply voltage. 7C1 + Input. Capacitor C1 positive terminal 8 N/C No Connection Figure 1. TC682 Test Circuit V GND GND C2 + C2 – RL C1 + C1 C2 C1 – IN VIN VOUT C All Caps = 3.3 µF OUT TC682 (+5V) VOUT – – 6 7 1 2 3 5 4 – + + – + *This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: Over Operating Temperature Range, VIN = +5V, test circuit Figure 1, unless otherwise indicated. Symbol Parameter Test Conditions Min Typ Max Unit VIN Supply Voltage Range RL = 2kΩ 2.4 — 5.5 V IIN Supply Current RL = ∞, TA = 25°C — 185 300 µA RL = ∞ — — 400 ROUT VOUT Source Resistance IL – = 10mA, T A = 25°C — 140 180 Ω Source Resistance IL – = 10mA — — 230 IL – = 5mA, VIN = 2.8V — 170 320 FOSC Oscillator Frequency — 12 — kHz PEFF Power Efficiency RL = 2kΩ, TA = 25°C90 92 — % VOUT EFF Voltage Conversion Efficiency VOUT, RL = ∞ 99 99.9 — % TelCom Semiconductor reserves the right to make changes in the circuitry or specifications detailed in this manual at any time without notice. Minimums and maximums are guaranteed. All other specifications are intended as guidelines only. TelCom Semiconductor assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement. INVERTING VOLTAGE DOUBLER TC682 |
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