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1SV262 Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1SV262 Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type www.kexin.com.cn 1 Diodes Unit: mm SOD-323 1.7+0.1 -0.1 2.6+0.1 -0.1 0.475 0.375 0.85+0.05 -0.05 1.0max Silicon Epitaxial Planar Diode 1SV262 Features High Capacitance Ratio:C2V/C25V = 8(Typ.) Low Series Resistance:rs = 0.6 (Typ.) Excellent C-V Characteristics,and Small Tracking Error. Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Reverse Voltage VR 34 V Peak Reverse Voltage VRM 36(RL =10K ) V Junction Temperature Tj 125 Storage Temperature Range Tstg -55to+125 E lectrical C haracteristics T a = 25 P aram eter S ym bol C onditions M in Typ M ax U nit Reverse V oltage V R IR =1 A 34 V R everse C urrent IR V R = 32 V 10 nA C 2V f= 1 M H z;V R = 2 V 3335.538 C 25V f= 1 M H z;V R = 25 V 2.6 2.85 3.0 C 2V/C 25V 12 12.5 C 25V/C 28V 1.03 S eries R esistance rs V R = 5V ,f= 470 M H z 0.6 0.8 Note : A vailableinm atched groupfor capacitanceto2.0% . C (M ax.)-C (M in.) C(M in.) (V R=2~25V ) Capacitance pF 0.020 C apacitance R atio Marking Marking TD |
Podobny numer części - 1SV262 |
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Podobny opis - 1SV262 |
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