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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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KDS6375 Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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KDS6375 Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page  SMD Type IC www.kexin.com.cn 1 SMD Type IC P-Channel 2.5V Specified PowerTrench MOSFET KDS6375 Features -8 A, -20 V. RDS(ON) = 24m @VGS =-4.5V RDS(ON) = 32m @VGS =-2.5V Low gate charge(26nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS -20 V Gate to Source Voltage VGS 8 V Drain Current Continuous (Note 1a) -8 A Drain Current Pulsed -50 A Power Dissipation for Single Operation (Note 1a) 2.5 Power Dissipation for Single Operation (Note 1b) 1.2 Power Dissipation for Single Operation (Note 1c) 1 Operating and Storage Temperature TJ,TSTG -55to175 Thermal Resistance Junction to Ambient (Note 1a) R JA 50 /W Thermal Resistance Junction to Ambient (Note 1c) R JA 125 /W Thermal Resistance Junction to Case (Note 1) R JC 25 /W ID PD W |
Podobny numer części - KDS6375 |
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Podobny opis - KDS6375 |
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