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2SC4181A Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Numer części 2SC4181A
Szczegółowy opis  NPN Silicon Epitaxia
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Producent  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Strona internetowa  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC4181A Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC4181A Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
NPN Silicon Epitaxia
2SC4181A
1 Emitter
2 Base
3 Collector
Features
High DC current gain:Hfe=1000 to 3200
Low VCE(sat): VCE(sat)=0.07v TYP
High VEBO: VEBO=15V
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
15
V
Collector current
IC
150
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 50V, IE=0
100
nA
Emitter cutoff current
IEBO
VEB = 10V, IC=0
100
nA
DC current gain *
hFE
VCE =5.0V , IC = 1.0mA
1000
1800
3200
Base-emitter voltage *
VBE
VCE =5.0V , IC = 1.0mA
0.56
V
Collector-emitter saturation voltage *
VCE(sat) IC = 50mA , IB = 5.0mA
0.07
0.3
V
Base-emitter saturation voltage *
VBE(sat) IC = 50mA , IB = 5.0mA
0.8
1.2
V
Gain bandwidth product
fT
VCE =5.0V , IE = -10mA
250
MHz
Output capacitance
Cob
VCB =5.0V , IE = 0, f = 1.0MHz
3.0
pF
Turn-on time
ton
VCC = 10V, VBE(off) = -2.7V
0.13
ns
Storage time
tstg
IC = 150mA ,
0.72
ns
Turn-off time
toff
IB1 =-IB2 = 15mA
1.22
ns
*. PW
350ìs,duty cycle
2%
hFE Classification
Marking
L15
L16
hFE
1000
2000
1600 3200


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