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2SA1576 Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1576 Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type Transistors 1 PNP silicon Transistor 2SA1576 Features Low noise:NF=0.5dB(TYP.) Epitaxial planar type. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current IC -100 A Collector power dissipation PC 200 W Junction temperature Tj 125 Storage temperature Tstg -55to+125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-50ìA -50 V Collector-emitter breakdown voltage BVCEO IC=-1mA -40 V Emitter-base breakdown voltage BVEBO IE=-50ìA -5 V Collector cutoff current ICBO VCB=-30V -0.5 ìA Emitter cutoff current IEBO VEB=-4V -0.5 ìA Collector-emitter saturation voltage VCE(sat) IC/IB=-50mA/-5mA -0.5 V DC current transfer ratio hFE VCE=-6V, IC=-1mA 120 560 Transition frequency fT VCE=-12V, IE=2mA 140 MHz Output capacitance Cob VCB=-12V, IE=0A, f=1MHz 3.5 pF hFE Classification Marking Q R S hFE 120 270 180 390 270 560 www.kexin.com.cn |
Podobny numer części - 2SA1576 |
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Podobny opis - 2SA1576 |
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