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4N25GV Arkusz danych(PDF) 6 Page - Vishay Siliconix |
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4N25GV Arkusz danych(HTML) 6 Page - Vishay Siliconix |
6 / 9 page 4N25(G)V/ 4N35(G)V Series Vishay Telefunken Rev. A4, 11–Jan–99 91 Typical Characteristics (Tamb = 25_C, unless otherwise specified) 0 50 100 150 200 250 300 0 40 80 120 Tamb – Ambient Temperature ( °C) 96 11700 Coupled device Phototransistor IR-diode Figure 6. Total Power Dissipation vs. Ambient Temperature 0.1 1.0 10.0 100.0 1000.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 96 11862 Figure 7. Forward Current vs. Forward Voltage 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 Tamb – Ambient Temperature ( °C ) 96 11874 VCE=10V IF=10mA Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature 1 10 100 1000 10000 0 102030 405060 708090 100 Tamb – Ambient Temperature ( °C ) 96 11875 VCE=10V IF=0 Figure 9. Collector Dark Current vs. Ambient Temperature 0.001 0.010 0.100 1.000 1 10 100 IF – Forward Current ( mA ) 96 11876 VCB=10V Figure 10. Collector Base Current vs. Forward Current 0.01 0.10 1.00 10.00 100.00 0.1 1.0 10.0 100.0 IF – Forward Current ( mA ) 96 11904 VCE=10V Figure 11. Collector Current vs. Forward Current |
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