BA682 datasheet(2/3 Pages) VISHAY

Numer części	BA682

Szczegółowy opis	Silicon Planar Diodes

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Producent	VISHAY [Vishay Siliconix]

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Document Number 85530

Rev. 1.5, 16-Mar-06

BA682 / BA683

Vishay Semiconductors

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 100 mA

VF

1000

mV

Reverse current

VR = 20 V

IR

50

nA

Diode capacitance

f = 100 MHz, VR = 1 V

CD

1.5

pF

f = 100 MHz, VR = 3 V

BA682

CD

1.25

pF

BA683

CD

1.2

pF

Differential forward resistance

f = 200 MHz, IF = 3 mA

BA682

rf

0.7

Ω

BA683

rf

1.2

Ω

f = 200 MHz, IF = 10 mA

BA682

rf

0.5

Ω

BA683

rf

0.9

Ω

Figure 1. Differential Forward Resistance vs. Forward Current

Figure 2. Diode Capacitance vs. Reverse Voltage

0.1

1

10

0.1

1

10

100

94 9074

BA 683

f = 200 MHz

Tj = 25 °C

BA 682

IF - Forward Current (mA)

0.1

0

0.5

1.0

1.5

2.0

3.0

100

10

94 9075

2.5

V -Reverse Voltage (V)

T

f = 200 MHz

= 25 °C

R

BA 683

BA 682

j

1

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