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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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2SJ602 Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SJ602 Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page  SMD Type MOSFET 1 www.kexin.com.cn 1.27+0.1 -0.1 1.27+0.1 -0.1 5.08+0.1 -0.1 0.1max 2.54+0.2 -0.2 2.54 4.57+0.2 -0.2 0.4+0.2 -0.2 0.81+0.1 -0.1 TO-263 Unit: mm 1Gate 2Drain 3 Source MOS Field Effect Transistor 2SJ602 Features Low on-resistance RDS(on)1 =73m MAX. (VGS =-10 V, ID =-10 A) RDS(on)2 = 107m MAX. (VGS =-4.0V,ID =-10 A) Low Ciss:Ciss = 1300 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Draintosourcevoltage VDSS -60 V Gate to source voltage VGSS 20 V Drain current (DC) ID 20 A Drain current(pulse) * ID 50 A Power dissipation TC=25 PD 40 W TA=25 PD 1.5 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 *PW 10 s, duty cycle 1% |
Podobny numer części - 2SJ602 |
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Podobny opis - 2SJ602 |
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