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2SK2211 Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Numer części 2SK2211
Szczegółowy opis  Silicon N-Channel MOSFET
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Producent  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Strona internetowa  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SK2211 Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SK2211 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
MOSFET
1
www.kexin.com.cn
1.80+0.1
-0.1
4.50+0.1
-0.1
0.53+0.1
-0.1
0.48+0.1
-0.1
1.50+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
SOT-89
Unit: mm
1. Base
2. Collector
3. Emiitter
1. Source
2. Drain
3. Gate
1
2
3
1Gate
2Drain
3Source
Silicon N-Channel MOSFET
2SK2211
Features
Low ON-resistance RDS(ON)
High-speed switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
20
V
ID
1.0
A
Idp *
2.0
A
Power dissipation
PD
1W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
*PW
10ms,Duty Cycle
50%
Drain current
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Drain to source breakdown voltage
VDSS
ID=0.1mA,VGS=0
30
V
Gate to source voltage
VGSS
IGS=0.1mA,VGS=0
20
V
Drain cut-off current
IDSS
VDS=25V,VGS=0
1.0
A
Gate leakage current
IGSS
VGS=
15V,VDS=0
10
A
Gate threshold voltage
Vth
VDS=5V,ID=1mA
0.8
2
V
Forward transfer admittance
Yfs
VDS=10V,ID=0.5A
0.5
S
VGS=4V,ID=0.5A
0.48
0.75
VGS=10V,ID=0.5A
0.35
0.6
Input capacitance
Ciss
87
pF
Output capacitance
Coss
69
pF
Reverse transfer capacitance
Crss
23
pF
Turn-on delay time
ton
12
ns
Rise time
tr
160
ns
Turn-off delay time
toff
60
ns
VDS=10V,VGS=0,f=1MHZ
ID=0.5A,VGS(on)=10V,RL=10
,VDD=10V
Drain to source on-state resistance
RDS(on)
Marking
Marking
2M


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