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BDW23C Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

Numer części BDW23C
Szczegółowy opis  isc Silicon NPN Darlington Power Transistor
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
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BDW23C Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDW23/A/B/C
DESCRIPTION
·Collector Current -IC= 6A
·High DC Current Gain-hFE= 750(Min)@ IC= 2A
·Complement to Type BDW24/A/B/C
APPLICATIONS
·Designed for hammer drivers, audio amplifiers applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW23
45
BDW23A
60
BDW23B
80
VCER
Collector-Emitter
Voltage
BDW23C
100
V
BDW23
45
BDW23A
60
BDW23B
80
VCEO
Collector-Emitter
Voltage
BDW23C
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
8
A
IB
B
Base Current-Continuous
0.2
A
PC
Collector Power Dissipation
@ TC=25℃
50
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
isc Website:www.iscsemi.cn


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