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BDW57 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części BDW57
Szczegółowy opis  isc Silicon NPN Power Transistors
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Strona internetowa  http://www.iscsemi.cn
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BDW57 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BDW55/57/59
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDW55
45
BDW57
60
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDW59
IC= 10mA ;IB=0
B
80
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 0.5A; IB= 50mA
0.5
V
VBE(on)
Base-Emitter On Voltage
IC= 0.5A ; VCE= 2V
1.0
V
ICBO
Collector Cutoff Current
VCB= VCBOmax;IE= 0
0.1
μA
BDW55
VCB= 30V; IE=0;TJ= 150℃
10
BDW57
VCB= 45V; IE=0;TJ= 150℃
10
ICBO
Collector Cutoff Current
BDW59
VCB= 70V; IE=0;TJ= 150℃
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
10
μA
hFE-1
DC Current Gain
IC= 5mA ; VCE= 2V
25
hFE-2
DC Current Gain
IC= 150mA ; VCE= 2V
40
250
hFE-3
DC Current Gain
IC= 500mA ; VCE= 2V
25
fT
Current-Gain—Bandwidth Product
IC= 50mA ; VCE= 5V;ftest= 35MHz
250
MHz
Switching times
td
Delay Time
30
ns
tr
Rise Time
30
ns
tstg
Storage Time
500
ns
tf
Fall Time
IC= 0.15A; IB1= -IB2= 15mA;
VCC= 10.2V
80
ns
isc Website:www.iscsemi.cn
2


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