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BDW59 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDW59 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDW55/57/59 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDW55 45 BDW57 60 VCEO(SUS) Collector-Emitter Sustaining Voltage BDW59 IC= 10mA ;IB=0 B 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 0.5 V VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 2V 1.0 V ICBO Collector Cutoff Current VCB= VCBOmax;IE= 0 0.1 μA BDW55 VCB= 30V; IE=0;TJ= 150℃ 10 BDW57 VCB= 45V; IE=0;TJ= 150℃ 10 ICBO Collector Cutoff Current BDW59 VCB= 70V; IE=0;TJ= 150℃ 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 10 μA hFE-1 DC Current Gain IC= 5mA ; VCE= 2V 25 hFE-2 DC Current Gain IC= 150mA ; VCE= 2V 40 250 hFE-3 DC Current Gain IC= 500mA ; VCE= 2V 25 fT Current-Gain—Bandwidth Product IC= 50mA ; VCE= 5V;ftest= 35MHz 250 MHz Switching times td Delay Time 30 ns tr Rise Time 30 ns tstg Storage Time 500 ns tf Fall Time IC= 0.15A; IB1= -IB2= 15mA; VCC= 10.2V 80 ns isc Website:www.iscsemi.cn 2 |
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