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BDW59 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

Numer części BDW59
Szczegółowy opis  isc Silicon NPN Power Transistors
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Strona internetowa  http://www.iscsemi.cn
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BDW59 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BDW55/57/59
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: VCEO(SUS)= 45V- BDW55
= 60V- BDW57
= 80V- BDW59
·Complement to Type BDW56/58/60
APPLICATIONS
·Designed for use in professional equipment such as
telecommunication and etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW55
45
BDW57
60
VCBO
Collector-Base
Voltage
BDW59
100
V
BDW55
45
BDW57
60
VCER
Collector-Emitter
Voltage RBE= 1kΩ
BDW59
100
V
BDW55
45
BDW57
60
VCEO
Collector-Emitter
Voltage
BDW59
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Peak
1.5
A
PC
Collector Power Dissipation
@ TC=25℃
8
W
TJ
Junction Temperature
175
Tstg
Storage Temperature Range
-65~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
10
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
100
℃/W
isc Website:www.iscsemi.cn


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