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KSD401 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części KSD401
Szczegółowy opis  isc Silicon NPN Power Transistor
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

KSD401 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
KSD401
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA ; IB= 0
150
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 0.5mA ; IE= 0
200
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 0.5mA; IC= 0
5
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 0.5A; IB= 50mA
1.0
V
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
50
μA
hFE
DC Current Gain
IC= 0.4A; VCE= 10V
40
400
fT
Current-Gain—Bandwidth Product
IC= 0.4A; VCE= 10V
5
MHz
hFE Classifications
R
O
Y
G
40-80
70-140
120-240
200-400
isc Website：www.iscsemi.cn
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