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BDW60 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDW60 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDW56/58/60 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDW56 -45 BDW58 -60 VCEO(SUS) Collector-Emitter Sustaining Voltage BDW60 IC= -10mA ;IB=0 B -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -0.5 V VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -2V -1.0 V ICBO Collector Cutoff Current VCB= VCBOmax;IE= 0 -0.1 μA BDW56 VCB= -30V; IE=0;TJ= 150℃ -10 BDW58 VCB= -45V; IE=0;TJ= 150℃ -10 ICBO Collector Cutoff Current BDW60 VCB= -70V; IE=0;TJ= 150℃ -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -10 μA hFE-1 DC Current Gain IC= -5mA ; VCE= -2V 25 hFE-2 DC Current Gain IC= -150mA ; VCE= -2V 40 250 hFE-3 DC Current Gain IC= -500mA ; VCE= -2V 25 fT Current-Gain—Bandwidth Product IC= -50mA;VCE= -5V;ftest= 35MHz 75 MHz Switching times td Delay Time 30 ns tr Rise Time 40 ns tstg Storage Time 500 ns tf Fall Time IC= 0.15A; IB1= -IB2= 15mA; VCC= 10.2V 80 ns isc Website:www.iscsemi.cn 2 |
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