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2SA1567 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1567 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1567 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -50 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A B -0.35 V ICBO Collector Cutoff Current VCB= -50V ; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -100 μA hFE DC Current Gain IC= -6A ; VCE= -1V 50 COB Output Capacitance IE=0 ; VCB= -10V;ftest= 1.0MHz 330 pF fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 40 MHz Switching Times ton Turn-on Time 0.4 μs tstg Storage Time 0.4 μs tf Fall Time IC= -6A ,RL= 4Ω, IB1= -IB2= -0.12A,VCC= -24V 0.2 μs isc Website:www.iscsemi.cn 2 |
Podobny numer części - 2SA1567 |
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Podobny opis - 2SA1567 |
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