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2SA969 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA969 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA969 DESCRIPTION ·With TO-66 package Fig.1 simplified outline (TO-66) and symbol ·Complement to type 2SC2239 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING(See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A IE Emitter current 1.5 A PT Total power dissipation TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ |
Podobny numer części - 2SA969 |
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Podobny opis - 2SA969 |
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