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2SA1141 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1141 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1141 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-4.5A ;IB=-0.45A -0.7 -1.5 V VBE Base-emitter on voltage IC=-4.5A ; VCE=-2V -1.2 -2.0 V ICBO Collector cut-off current VCB=-80V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE -1 DC current gain IC=-1A ; VCE=-2V 60 200 hFE -2 DC current gain IC=-4.5A ; VCE=-2V 40 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 390 pF fT Transition frequency IC=-1A ; VCE=-2V 90 MHz hFE-1 classifications R Q 60-120 100-200 2 |
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