TSFF5200 datasheet(1/6 Pages) VISHAY

Numer części	TSFF5200

Szczegółowy opis	High Speed IR Emitting Diode in ø5 mm (T–13/4) Package

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Producent	VISHAY [Vishay Siliconix]

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TSFF5200

Vishay Telefunken

1 (6)

Rev. 2, 29-Jun-99

www.vishay.de

• FaxBack +1-408-970-5600

Document Number 81060

High Speed IR Emitting Diode in ø5 mm (T–1

¾)

Package

Description

TSFF5200 is a high speed infrared emitting diode in

GaAlAs on GaAlAs double hetero (DH) technology,

molded in a clear, untinted plastic package.

The new technology combines the high speed of DH–

GaAlAs with the efficiency of standard GaAlAs and the

low forward voltage of the standard GaAs technology.

Features

D High modulation bandwidth (35 MHz)

D Extra high radiant power and radiant intensity

D Low forward voltage

D Suitable for high pulse current operation

D Standard T–1¾ (ø 5 mm) package

D Angle of half intensity ϕ = ± 10°

D Peak wavelength lp = 870 nm

D High reliability

D Good spectral matching to Si photodetectors

94 8390

Applications

IInfrared video data transmission between Camcorder and TV set.

Free air data transmission systems with high modulation frequencies or

high data transmission rate requirements.

Absolute Maximum Ratings

Tamb = 25_C

Parameter

Test Conditions

Symbol

Value

Unit

Reverse Voltage

VR

5

V

Forward Current

IF

100

mA

Peak Forward Current

tp/T = 0.5, tp = 100 ms

IFM

300

mA

Surge Forward Current

tp = 100 ms

IFSM

1

A

Power Dissipation

PV

250

mW

Junction Temperature

Tj

100

°C

Operating Temperature Range

Tamb

–25...+85

°C

Storage Temperature Range

Tstg

–25...+85

°C

Soldering Temperature

t

x 5sec, 2 mm from case

Tsd

260

°C

Thermal Resistance Junction/Ambient

RthJA

300

K/W

Podobny numer części - TSFF5200

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	TSFF5210	113Kb / 6P	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Rev. 1.5, 28-Nov-06
	TSFF5210	109Kb / 5P	High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero Rev. 1.6, 04-Aug-08
	TSFF5210	111Kb / 5P	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Rev. 1.7, 29-Jun-09
	TSFF5210	113Kb / 5P	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero 01-Jan-2022
	TSFF5210	112Kb / 5P	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero 01-Jan-2023

More results

Podobny opis - TSFF5200

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	TSHF5400	84Kb / 6P	High Speed IR Emitting Diode in ø 5 mm (T–13/4) Package Rev. 7, 02-Aug-99
	TSPF5400	85Kb / 6P	High Speed IR Emitting Diode in ø 5 mm (T–13/4) Package Rev. 2, 20-May-99
	TSFF5400	86Kb / 6P	High Speed IR Emitting Diode in ø 5 mm (T–13/4) Package Rev. 5, 29-Jun-99
	TSAL7400	76Kb / 5P	GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package Rev. 3, 20-May-99
	TSAL6200	82Kb / 5P	GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package Rev. 6, 20-May-99
	TSAL7300	83Kb / 6P	GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package Rev. 1, 20-May-99
	TSAL6100	82Kb / 5P	GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package Rev. 2, 20-May-99
	TSAL6400	76Kb / 5P	GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package Rev. 4, 20-May-99
	TSAL7200	82Kb / 5P	GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package Rev. 1, 20-May-99
	TSAL7600	80Kb / 5P	GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package Rev. 2, 20-May-99

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