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TSHA520 Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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1 / 6 page TSHA520. Vishay Telefunken 1 (6) Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 Document Number 81019 GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1 ¾) Package Description The TSHA520. series are high efficiency infrared emit- ting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement. Features D Extra high radiant power and radiant intensity D Suitable for high pulse current operation D Standard T–1¾ (ø 5 mm) package D Angle of half intensity ϕ = ± 12° D Peak wavelength lp = 875 nm D High reliability D Good spectral matching to Si photodetectors 94 8390 Applications Infrared remote control and free air transmission systems with high power and long transmission distance re- quirements in combination with PIN photodiodes or phototransistors. Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector. Absolute Maximum Ratings Tamb = 25_C Parameter Test Conditions Symbol Value Unit Reverse Voltage VR 5 V Forward Current IF 100 mA Peak Forward Current tp/T = 0.5, tp = 100 ms IFM 200 mA Surge Forward Current tp = 100 ms IFSM 2.5 A Power Dissipation PV 210 mW Junction Temperature Tj 100 °C Operating Temperature Range Tamb –55...+100 °C Storage Temperature Range Tstg –55...+100 °C Soldering Temperature t x 5sec, 2 mm from case Tsd 260 °C Thermal Resistance Junction/Ambient RthJA 350 K/W |
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