STF8220 datasheet(3/7 Pages) SAMHOP

Numer części	STF8220

Szczegółowy opis	Dual N-Channel E nhancement Mode F ield E ffect Transistor

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Producent	SAMHOP [SamHop Microelectronics Corp.]

Strona internetowa	http://www.samhop.com.tw

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Parameter

S ymbol

Condition

Min Typ Max Unit

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS

Diode Forward Voltage

VSD

VGS = 0 V, Is = 1.7A

1.2

V

b

Notes

c.Guaranteed by design, not subject to production testing.

b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.

F igure 2. Transfer C haracteristics

F igure 4. On-R esistance Variation with

Drain C urrent and Temperature

ID, Drain C urrent (A)

V GS , G ate-to-S ource Voltage (V )

3

S TF 8220

60

50

40

30

20

10

0

15

12

9

6

0

0.5

1.0

1.5

2.0

2.5

3.0

25

125

0.8

T j( C )

100

50

75

T j, J unction T emperature ( C )

F igure 1. Output C haracteristics

V DS , Drain-to-S ource Voltage (V )

20

16

12

8

4

0

0.5

1

1.5

2

2.5

3

V GS =1.5V

V GS =4V

V GS =2.5V

F igure 3. On-R esistance vs. Drain C urrent

and G ate V oltage

4

8

12

16

20

1

V GS =2.5V

V GS =4V

3

T j=125 C

V GS =2V

150

a.Surface Mounted on FR4 Board, t <=10sec.

25 C

V GS =2.5V

ID=4A

0

0.8

1.8

1.6

1.4

1.2

1.0

-55 C

V GS =4V

ID=6A

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