Zakładka z wyszukiwarką danych komponentów |
|
2SC3637 Arkusz danych(PDF) 2 Page - Savantic, Inc. |
|
2SC3637 Arkusz danych(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3637 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 500 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 2.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 µA ICES Collector cut-off current VCE=900V; RBE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=1A ; VCE=5V 8 Switching times ts Storage time 3.0 µs tf Fall time VCC=200V;IC=5A; IB1=1A; IB2=-2A 0.1 0.2 µs |
Podobny numer części - 2SC3637 |
|
Podobny opis - 2SC3637 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |